Investigation of Mg X Zn1−X O/ZnO Heterojunction Thin-Film Transistors Fabricated Using Mist-Chemical Vapor Deposition
Author:
Affiliation:
1. Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9722602/09705135.pdf?arnumber=9705135
Reference29 articles.
1. Electron scattering analysis in 2DEG in sputtering-grown MgZnO/ZnO heterostructure
2. MgZnO/ZnO heterostructures with electron mobility exceeding 1 $\times$ 106 cm2/Vs;falson;Sci Rep,2016
3. Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering
4. Effects of electron interference on temperature dependent transport properties of two dimensional electron gas at MgZnO/ZnO interfaces
5. Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures
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