Impact of ZnO Cap Layer on the Performance of MgZnO/CdZnO Heterostructure With YO Spacer Layer<sub /> <sub />-Reference-Cited by-同舟云学术

Impact of ZnO Cap Layer on the Performance of MgZnO/CdZnO Heterostructure With YO Spacer Layer

Published:2022-11 Issue:11 Volume:69 Page:5991-5995
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar Pawan¹,Chaudhary Sumit¹,Khan Md Arif²^ORCID,Singh Ruchi¹^ORCID,Htay Myo Than³^ORCID,Prajesh Rahul⁴,Agarwal Ajay⁵,Mukherjee Shaibal⁶^ORCID

Affiliation:

1. Department of Electrical Engineering, Hybrid Nanodevice Research Group (HNRG), Indian Institute of Technology Indore, Indore, Madhya Pradesh, India

2. AGNIT Semiconductors Private Ltd., Bengaluru, Karnataka, India

3. Department of Electrical and Computer Engineering, Hashimoto-Myo Laboratory, Shinshu University, Nagano, Japan

4. Semiconductor Devices Fabrication Group, CSIR-CEERI, Pilani, India

5. Department of Electrical Engineering and the School of AI and Data Science, Indian Institute of Technology Jodhpur, Jodhpur, India

6. Department of Electrical Engineering, and the Centre for Advance Electronics (CAE), HNRG, Indian Institute of Technology Indore, Indore, Madhya Pradesh, India

Funder

DST SERB Project

JSPS Invitational Fellowship

TIH-IoT CHANAKYA Group (Ph

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09901479.pdf?arnumber=9901479

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET;Semiconductor Science and Technology;2024-06-05

2. ZnO with p-Type Doping: Recent Approaches and Applications;ACS Applied Electronic Materials;2023-08-07