ZnO with p-Type Doping: Recent Approaches and Applications-Reference-Cited by-同舟云学术

ZnO with p-Type Doping: Recent Approaches and Applications

Published:2023-08-07 Issue:8 Volume:5 Page:4014-4034
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yang Ruqi¹,Wang Fengzhi¹²,Lu Jianguo¹²^ORCID,Lu Yangdan¹,Lu Bojing¹,Li Siqin¹,Ye Zhizhen¹²^ORCID

Affiliation:

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

2. Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China

Funder

Primary Research and Development Plan of Zhejiang Province

Pioneer and Leading Goose Research and Development Program of Zhejiang Province

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00515

Reference114 articles.

1. ZnO as a Functional Material, a Review

2. Zinc oxide light-emitting diodes: a review

3. Hybrid inorganic-organic light-emitting heterostructure devices based on ZnO

4. Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

5. Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices

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