The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology-Reference-Cited by-同舟云学术

The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology

Published:2022-03 Issue:3 Volume:69 Page:1600-1603
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yen C.-M.¹,Chang S.-Y.²,Chen K.-C.¹^ORCID,Feng Y.-J.¹,Chen L.-H.¹,Liao B.-Z.¹,Lee M.-H.³^ORCID,Chen S.-C.⁴,Liao M.-H.¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan

2. Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

3. Graduate Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan

4. Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology and College of Engineering, Chang Gung University, Taoyuan, Taiwan

Funder

Ministry of Science and Technology (MOST), Taiwan

Ministry of Education and National Taiwan University, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09682435.pdf?arnumber=9682435

Reference19 articles.

1. Measurement of area density of vertically aligned carbon nanotube forests by the weight-gain method

2. Growth and fabrication of carbon-based three-dimensional heterostructure in through-silicon vias (TSVs) for 3D interconnects

3. Integration of Vertical Carbon Nanotube Bundles for Interconnects

4. Low-cost micrometer-scale silicon vias (SVs) fabrication by metal-assisted chemical etching (MaCE) and carbon nanotubes (CNTs) filling

5. Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability

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1. Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals;IEEE Transactions on Electron Devices;2023-08

2. The Analysis of Multiwall Carbon Nanotubes as Through Silicon Via by Equivalent Circuit Model at Different Operating Temperatures in Multilayers Stacking Scheme;IEEE Transactions on Electron Devices;2023-06

3. The Advantages of Low temperature (<400°C) Carbon Nano-Tubes (CNTs) as Through Silicon Vias (TSVs) in Multi-Layer Stacking and Backside Power-Via Application;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

4. The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure;IEEE Transactions on Electron Devices;2022-09

5. Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs;Semiconductor Science and Technology;2022-07-12