Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices
Author:
Affiliation:
1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea
Funder
National Research Foundation of Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10004030/09965948.pdf?arnumber=9965948
Reference47 articles.
1. A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction
2. High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal
3. Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance
4. Effect of High Pressure Annealing Temperature on the Ferroelectric Properties of TiN/Hf0.25Zr0.75O2/TiN Capacitors
5. Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance
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3. Oxygen vacancy effects on polarization switching of ferroelectric Bi2FeCrO6 thin films;Physical Review Materials;2024-05-21
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