Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low <i>R</i> <sub>ON,sp</sub>-Reference-Cited by-同舟云学术

Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low R _ON,sp

Published:2022-03 Issue:3 Volume:69 Page:1200-1205
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Duan Baoxing¹^ORCID,Yuan Jiahui¹^ORCID,Wang Yandong¹^ORCID,Yang Luoyun¹^ORCID,Yang Yintang¹^ORCID

Affiliation:

1. Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

Funder

Science Foundation for Distinguished Young Scholars of Shaanxi Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09709600.pdf?arnumber=9709600

Reference38 articles.

1. High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

2. 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

3. 600 V GaN vertical V-trench MOSFET with MBE regrown channel

4. Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers

5. Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

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3. Novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion;CrystEngComm;2023

4. Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs;Micromachines;2022-12-28

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