Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress
Author:
Affiliation:
1. Department of Material Science, KU Leuven, Leuven, Belgium
2. imec, Leuven, Belgium
Funder
European Commission through the 7th Framework Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09732185.pdf?arnumber=9732185
Reference31 articles.
1. An accurate model of subbreakdown due to band-to-band tunneling and some applications
2. Electrical analysis of external mechanical stress effects in short channel MOSFETs on (001) silicon
3. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
4. Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress
5. On the impact of mechanical stress on gate oxide trapping
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