Physical Insights Into the Performances of Negative Capacitance Field Effect Transistors Using Single-Domain Versus Multidomain Models
Author:
Affiliation:
1. School of Electronic Science and Engineering, Xiamen University, Xiamen, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10025571/10003127.pdf?arnumber=10003127
Reference31 articles.
1. Ferroelectric Field Effect Transistors for Memory Applications
2. Theory of the Structure of Ferromagnetic Domains in Films and Small Particles
3. Spacer Engineering in Negative Capacitance FinFETs
4. Negative Differential Resistance in Negative Capacitance FETs
5. Modeling and design considerations for negative capacitance field-effect transistors
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