L-Cysteine Functionalized Al<sub>0.18</sub>Ga<sub>0.82</sub>N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection-Reference-Cited by-同舟云学术

L-Cysteine Functionalized Al_0.18Ga_0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection

Published:2022-06 Issue:6 Volume:69 Page:3367-3372
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jiang Xuecheng¹,Xie Feng²,Gu Yan¹,Dong Xiaohu¹,Zhang Xiumei¹,Zhu Chun¹,Qian Weiying¹,Lu Naiyan¹,Chen Guoqing¹,Yang Guofeng¹^ORCID

Affiliation:

1. Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, School of Science, Jiangnan University, Wuxi, China

2. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei, China

Funder

National Natural Science Foundation of China

Key Research and Development Program of Jiangsu Province

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for Central Universities

Science and Technology Program of Suzhou

Science and Technology Development Foundation of Wuxi

Postgraduate Research and Practice Innovation Program of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09763872.pdf?arnumber=9763872

Reference42 articles.

1. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

2. Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors

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4. Metal—Amino acid chemistry: Weak interactions and related functions of side chain groups;yamauchi;ChemInform,2002

5. Detection of heavy metal ions using meander gated GaN HEMT sensor

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