Study on Enhancing Electrostatic Discharge Stress Robustness of Flexible Thin-Film Transistors via Interface Modification-Reference-Cited by-同舟云学术

Study on Enhancing Electrostatic Discharge Stress Robustness of Flexible Thin-Film Transistors via Interface Modification

Published:2024-05 Issue:5 Volume:71 Page:2901-2906
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shen Yuxuan¹,Yan Yan¹^ORCID,Zhang Meng¹,Zhou Ye²^ORCID,Jiang Zhendong¹,Wong Man³^ORCID,Kwok Hoi-Sing³^ORCID

Affiliation:

1. State Key Laboratory of Radio Frequency Heterogeneous Integration and the College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China

2. State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, China

3. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Sai Kung, Hong Kong

Funder

National Natural Science Foundation of China

Technology Innovation Commission of Shenzhen

Guangdong Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10502370.pdf?arnumber=10502370

Reference44 articles.

1. Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

2. Correlation Between TLP, HMM, and System-Level ESD Pulses for Cu Metallization

3. An electrostatic discharge model for thin-film transistor fabrication

4. A Pentacene‐based Nanotube Displaying Enriched Electrochemical and Photochemical Activities

5. L-Cysteine Functionalized Al_0.18Ga_0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability issues of amorphous oxide semiconductor-based thin film transistors;Journal of Materials Chemistry C;2024