Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin

Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin–HEMTs

Published:2022-05 Issue:5 Volume:69 Page:2275-2281
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pampori Ahtisham Ul Haq¹^ORCID,Ahsan Sheikh Aamir²^ORCID,Chauhan Yogesh Singh¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Nanolab, IIT Kanpur, Kanpur, India

2. Department of Electronics andCommunication Engineering, Nanoelectronics Research and Development Laboratory, National Institute of Technology Srinagar, Srinagar, India

Funder

Prime Minister’s Research Fellowship

Swarna Jayanti Fellowship

FIST Scheme of the Department of Science and Technology

DST-SERB Startup Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09737564.pdf?arnumber=9737564

Reference45 articles.

1. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

2. Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

3. Analysis and Optimization of GaN Based Multi-Channels FinFETs

4. Analysis of GaN nanoscale FinFET for low power circuit applications

5. Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure

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