GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, SAR, China
2. School of Integrated Circuits, Peking University, Beijing, China
Funder
Hong Kong Research Grants Council’s Research Impact Fund
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9839401/09789144.pdf?arnumber=9789144
Reference30 articles.
1. Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices
2. Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
3. Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform
4. Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes;reiner;Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage,2016
5. Innovative approaches for realisation of embedded chip packages - Technological challenges and achievements
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