Highly Scaled GaN Complementary Technology on a Silicon Substrate-Reference-Cited by-同舟云学术

Highly Scaled GaN Complementary Technology on a Silicon Substrate

Published:2023-04 Issue:4 Volume:70 Page:2121-2128
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xie Qingyun¹^ORCID,Yuan Mengyang¹^ORCID,Niroula John¹,Sikder Bejoy²^ORCID,Greer James A.¹,Rajput Nitul S.³^ORCID,Chowdhury Nadim²^ORCID,Palacios Tomás¹^ORCID

Affiliation:

1. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA

2. Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh

3. Advanced Materials Research Center, Technology Innovation Institute, Masdar City, Abu Dhabi, United Arab Emirates

Funder

Intel Corporation

National Aeronautics and Space Administration

Samsung Electronics Co., Ltd

Qualcomm Inc

Advanced Research Projects Agency-Energy

Bangladesh University of Engineering and Technology

Information and Communication Technology (ICT) Division, Government of Bangladesh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10065413.pdf?arnumber=10065413

Reference47 articles.

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3. A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

4. Impact of CF4 plasma treatment on GaN;chu;IEEE Electron Device Lett,2007

5. GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate

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