High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology-Reference-Cited by-同舟云学术

High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology

Published:2022-11-07 Issue: Volume: Page:
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Container-title:2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Yuan Mengyang¹,Xie Qingyun¹,Niroula John¹,Isamotu Mohamed Fadil¹,Rajput Nitul S.²,Chowdhury Nadim³,Palacios Tomas¹

Affiliation:

1. Massachusetts Institute of Technology,Microsystems Technology Laboratories,Cambridge,MA,U.S.A.,02139

2. Advanced Materials Research Center, Technology Innovation Institute,U.A.E.

3. Bangladesh University of Engineering and Technology,Department of Electrical and Electronic Engineering,Dhaka,Bangladesh,1205

Funder

National Aeronautics and Space Administration

Lockheed Martin

Air Force Office of Scientific Research

Publisher

IEEE

Link

Reference37 articles.

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