The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory

Author:

Zhang Xisai1,Duan Xinpei2ORCID,Niu Wencheng3,Liu Xingqiang3ORCID,Zou Xuming3ORCID,Huang Hao4ORCID,Mudiyanselage Dinusha Herath5,Fu Houqiang5ORCID,Jiang Bei6ORCID,Liu Guoxia1,Yang Zhenyu1ORCID

Affiliation:

1. School of Electronic and Information Engineering, Qingdao University, Qingdao, China

2. China Electronics Technology Group Corporation No. 58 Research Institute, Wuxi, China

3. School of Physics and Electronics, Hunan University, Changsha, China

4. MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, Guangxi, China

5. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USA

6. Faculty of Physics and Electronic Science, Hubei University, Wuhan, China

Funder

National Natural Science Foundation of China

National KeyResearch and Development Program of China

Open Foundation of Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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