Tunable GaTe-MoS2 van der Waals p–n Junctions with Novel Optoelectronic Performance
Author:
Affiliation:
1. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
2. University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing 100049, China
Funder
the Beijing Natural Science Foundation of Beijing Municipality
the 973 Program of the Ministry of Science and Technology of the People's Republic of China
the 100-Talents Program of the Chinese Academy of Sciences
the National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03291
Reference58 articles.
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