Investigation of Source Region’s Random Doping Fluctuation Effects on Analog and RF Performance in All-Si DG-TFET-Reference-Cited by-同舟云学术

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Investigation of Source Region’s Random Doping Fluctuation Effects on Analog and RF Performance in All-Si DG-TFET

Published:2022-09 Issue:9 Volume:69 Page:5330-5336
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Maurya Ashish¹^ORCID,Koley Kalyan²^ORCID,Mech Bhubon C.³^ORCID,Kumar Jitendra¹^ORCID,Kumar Pankaj¹^ORCID

Affiliation:

1. Department of Electronics Engineering, Indian Institute of Technology, Dhanbad, Jharkhand, India

2. Birla Institute of Technology, Mesra, Jharkhand, India

3. Department of Electronics Engineering, Defense Institute of Advanced Technology, Pune, Maharashtra, India

Funder

Department of Science and Technology, Government of India through INSPIRE Scheme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09848417.pdf?arnumber=9848417

Reference35 articles.

1. More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit Operation

2. Tunneling Field-Effect Transistor: Capacitance Components and Modeling

3. TFET-Based Circuit Design Using the Transconductance Generation Efficiency $ {g}_{m}/ {I}_{d}$ Method

4. Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I Estimation

5. Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs With Metal–Interlayer–Semiconductor Source/Drain Contact Structure

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and investigation of gaussian doped junction free SMDG and TMDG-TFET for analog/RF applications;Engineering Research Express;2024-09-01

2. Performance and reliability assessment of source work function engineered charge plasma based Ti/HfO₂/Al₂O₃/Ge, double gate TFET;Engineering Research Express;2024-05-03

3. Evaluating Performance Using kϕ Index Parameter for a Symmetrical Junction NADGFET: A 3D TCAD Simulation Analysis;2023 International Conference on Next Generation Electronics (NEleX);2023-12-14

4. A Proposed Nonaligned Double Gate Junction FET Device and its Performance Improvement Using High-k Gate Oxide Material;Nano;2023-05-29

5. TCAD performance analysis of a symmetrical double gate non-aligned junction FET device with high and low dielectric gate oxide in sub-100 nm regime;International Journal of Electronics Letters;2023-02-16

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