A Proposed Nonaligned Double Gate Junction FET Device and its Performance Improvement Using High-k Gate Oxide Material

Abstract

This paper presents the effect of dielectric materials i.e., hafnium dioxide (HfO2, high-[Formula: see text] and silicon dioxide (SiO2, low-[Formula: see text], as gate-oxide material for the nonaligned double gate junction [Formula: see text]-channel field effect transistor (NADG-NFET). The NADGNFET device proposed in this work lowers the second order effects and improves the transistor linear performance at radio frequency. The device response with gate-oxide material is investigated by using two dielectric materials on the obtained current–voltage characteristics, intrinsic gain, and linearity parameter. The device simulations were done using a 2D-sentaurus TCAD tool. The results were examined in terms of DIBL (drain-induced barrier lowering), SS (subthreshold swing), [Formula: see text] current, [Formula: see text] ratio, the Intrinsic gain ([Formula: see text], and intermodulation distortion power-3 (IMD3) parameter. It has been found that high-[Formula: see text] dielectric decreases the DIBL by 40%, improves the [Formula: see text] ratio by 8 times, and also improves the intrinsic gain by 38% compared to low-[Formula: see text] dielectric material. However, the high frequency parameter result was better with low-[Formula: see text] dielectric material. This gives a trade-off in the device applications. The IMD3 plot shows that using the two gate-oxide material will give the same performance to the radio frequency (RF) signal.