Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution
Author:
Affiliation:
1. Department of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09732229.pdf?arnumber=9732229
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