A self-limiting layer-by-layer etching technique for 2H-MoS2-Reference-Cited by-同舟云学术

A self-limiting layer-by-layer etching technique for 2H-MoS2

Published:2017-02-07 Issue:3 Volume:10 Page:035201
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Lee Choong Hee,Lee Edwin W.,McCulloch William,Jamal-Eddine Zane,Krishnamoorthy Sriram,Newburger Michael J,Kawakami Roland K.,Wu Yiying,Rajan Siddharth

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=3/a=035201/pdf

Reference22 articles.

1. Single-layer MoS2 transistors

2. Small-signal amplifier based on single-layer MoS2

3. Layer-transferred MoS2/GaN PN diodes

4. Transferred large area single crystal MoS2 field effect transistors

5. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

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