Transferred large area single crystal MoS2 field effect transistors-Reference-Cited by-同舟云学术

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Transferred large area single crystal MoS2 field effect transistors

Published:2015-11-09 Issue:19 Volume:107 Page:193503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Choong Hee¹,McCulloch William²^ORCID,Lee Edwin W.¹,Ma Lu²,Krishnamoorthy Sriram¹,Hwang Jinwoo³,Wu Yiying²,Rajan Siddharth¹

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Chemistry and Biochemistry, The Ohio State University, Columbus, Ohio 43210, USA

3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934941

Reference29 articles.

1. Small-signal amplifier based on single-layer MoS2

2. $\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

3. Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

4. Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

5. A universal transfer route for graphene

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