Inserted Effects of MXene on Switching Mechanisms and Characteristics of SiO<sub>2</sub>-Based Memristor: Experimental and First-Principles Investigations-Reference-Cited by-同舟云学术

Inserted Effects of MXene on Switching Mechanisms and Characteristics of SiO₂-Based Memristor: Experimental and First-Principles Investigations

Published:2022-07 Issue:7 Volume:69 Page:3688-3693
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

He Nan¹^ORCID,Liu Jun¹,Xu Jianguang²^ORCID,Lian Xiaojuan¹,Wan Xiang¹,Hu Ertao¹,Liu Xiaoyan¹^ORCID,Ji Jie¹,Zhang Hao³,Wang Lei¹^ORCID,Xu Feng¹^ORCID,Tong Yi¹^ORCID

Affiliation:

1. College of Electronic and Optical Engineering, the College of FlexibleElectronics (Future Technology), and the College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China

2. School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng, China

3. Gusu Laboratory of Materials Science, Suzhou, China

Funder

Postgraduate Research and Practice Innovation Program of Jiangsu Province

Jiangsu Province Research Foundation

2030 Major Project of the Chinese Ministry of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09786006.pdf?arnumber=9786006