Realization of dual-functional resistive switching characteristics in Ag−In−Zn−S/sericin peptide-based memristive device

Abstract

Employing suitable materials and device engineering is one of the crucial methods toward the realization of multifunctional memristive devices for constructing bioinspired neuromorphic systems. In this work, dual-functional memristors composed of eco-friendly natural silk sericin, coexistently enabling the achievement of threshold switching and memory switching triggered by adjusting the compliance current value, have been fabricated with a specific two-terminal device structure: Ag/Ag−In−Zn−S/silk sericin/W. Experimentally, the as-manufactured memristors exhibit several desirable qualities, such as low switching voltage (< 0.7 V), relatively small cycle-to-cycle and device-to-device variabilities, nonvolatile multilevel storage characteristics, and rapid switching speed (40 ns). Beyond these qualities, fundamental synaptic behaviors, such as paired-pulse facilitation and spike-timing-dependent plasticity (STDP), have been mimicked. This was made possible by a filamentary mechanism based on Ag migration. The fitted time constants corresponding to the STDP potentiation and depression are about 30 ms, and the highest changes in synaptic weight for positive and negative voltage pulses are 84.4% and 61.7%, respectively. Furthermore, the typical coincidence detection task has been executed, demonstrated by simulation based on the fitted STDP's parameters of the sericin-based device. The results from this study indicate that the sericin-based memristors, as designed, have the potential to be employed in the creation of versatile neuromorphic devices for neuromorphic computing systems.