Bending Resistant Multibit Memristor for Flexible Precision Inference Engine Application-Reference-Cited by-同舟云学术

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Bending Resistant Multibit Memristor for Flexible Precision Inference Engine Application

Published:2022-08 Issue:8 Volume:69 Page:4737-4743
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pal Parthasarathi¹^ORCID,Lee Ke-Jing¹^ORCID,Thunder Sunanda²^ORCID,De Sourav³^ORCID,Huang Po-Tsang²^ORCID,Kampfe Thomas³^ORCID,Wang Yeong-Her¹^ORCID

Affiliation:

1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan

2. International College of Semiconductor Technology, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan

3. Center Nanoelectronic Technologies, Fraunhofer-Institut für Photonische Mikrosysteme (IPMS), Dresden, Germany

Funder

Ministry of Science and Technology (MOST), Taiwan

Materials Analysis Technology Inc

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09827965.pdf?arnumber=9827965

Reference43 articles.

1. Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

2. Physics of Semiconductor Devices

3. Enhanced resistive switching performance for bilayer HfO2/TiO2resistive random access memory

4. Synaptic electronics: materials, devices and applications

5. Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application

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