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Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

  • Published:2009-04 Issue:4 Volume:53 Page:438-444
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Monaghan S.,Hurley P.K.,Cherkaoui K.,Negara M.A.,Schenk A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Current transport in metal/hafnium oxide/silicon structure;Zhu;IEEE Electron Dev Lett,2002

2. Modeling of the tunneling currents through HfO2 and (HfO2)x (Al2O3)1−x gate stacks;Hou;IEEE Electron Dev Lett,2003

3. Interface characterisation and carrier transport in metal/HfO2/silicon structure;Chiu;J Appl Phys,2006

4. Modelling of tunneling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters;Campera;IEEE Trans Electron Dev,2007

5. Synopsys Inc., Sentaurus device user guide, version Z-2007.03. Mountain View, California; 2007.
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