Electronic Band Offset Determination of Oxides Grown by Atomic Layer Deposition on Silicon-Reference-Cited by-同舟云学术

Electronic Band Offset Determination of Oxides Grown by Atomic Layer Deposition on Silicon

Published:2023-09 Issue:5 Volume:13 Page:682-690
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Khorani Edris¹^ORCID,Messmer Christoph A.²^ORCID,Pain Sophie L.¹^ORCID,Niewelt Tim¹^ORCID,Healy Brendan F. M.¹^ORCID,Wratten Ailish¹^ORCID,Walker Marc³,Grant Nicholas E.¹^ORCID,Murphy John D.¹^ORCID

Affiliation:

1. School of Engineering, University of Warwick, Coventry, U.K.

2. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg, Germany

3. Department of Physics, University of Warwick, Coventry, U.K.

Funder

Engineering and Physical Sciences Research Council

Funded Warwick Analytical Science

Charged Oxide Inversion Layer

Leverhulme Trust

German Federal Ministry for Economic Affairs and Climate Action

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/10234139/10178028.pdf?arnumber=10178028

Reference61 articles.

1. Tunnel oxide passivated contacts as an alternative to partial rear contacts

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3. Carrier-selective contacts for Si solar cells

4. Engineering aluminum oxide/polysilicon hole selective passivated contacts for high efficiency solar cells

5. Solar cell efficiency tables (Version 60)

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