Electrical Characteristics and Defect Dynamics Induced by Swift Heavy Ion Irradiation in Pt/PtO/-Ga₂O₃ Vertical Schottky Barrier Diodes<i /> <i /> <i />-Reference-Cited by-同舟云学术

Electrical Characteristics and Defect Dynamics Induced by Swift Heavy Ion Irradiation in Pt/PtO/-Ga₂O₃ Vertical Schottky Barrier Diodes

Published:2022-11 Issue:11 Volume:69 Page:5996-6001

ISSN:0018-9383

Container-title:IEEE Transactions on Electron Devices

language:

Short-container-title:IEEE Trans. Electron Devices

Author:

Manikanthababu N.¹^ORCID,Sheoran Hardhyan¹,Prajna K.²^ORCID,Khan S. A.³,Asokan K.³,Vas J. V.⁴,Medwal R.⁵,Panigrahi B. K.²,Singh R.⁶^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Delhi, New Delhi, India
2. Indira Gandhi Center for Atomic Research, Kalpakkam, India
3. Inter University Accelerator Centre, New Delhi, India
4. Maju Laboratory, International Joint Research Unit, UMI 3654, CNRS, Universite cote dAzur, Sorbonne Universite, Nanyang Technological University, Jurong West, Singapore
5. Department of Physics, Indian Institute of Technology Kanpur, Kanpur, India
6. Department of Physics and the Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, India

Funder

Department of Science and Technology (DST), India, through the Brazil, Russia, India, China, and South Africa (BRICS) Project
DST, India, through the BRICS Cooperation Scheme DST/IMRCD/BRICS/Pilot Call 3/GaO-Nitrides/2019

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09906534.pdf?arnumber=9906534

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1. Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers;Journal of Alloys and Compounds;2024-05
2. Effect of gamma irradiation on β -Ga2O3 vertical Schottky barrier diode;Applied Physics Letters;2023-11-20
3. Theoretical Study on the Role of Gating and Photoconduction on Ga₂O₃ Phototransistors;IEEE Sensors Journal;2023-11-15
4. Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K);Materials Science in Semiconductor Processing;2023-10
5. Investigation of high-performance Schottky diodes on a Ga₂O₃ epilayer using Cu with high barrier height, high temperature stability and repeatability;Journal of Physics D: Applied Physics;2023-07-12