Vertical MoTe₂/Ge Heterojunction Photodiode for 1550-nm Near-Infrared Photodetection-Reference-Cited by-同舟云学术

Vertical MoTe₂/Ge Heterojunction Photodiode for 1550-nm Near-Infrared Photodetection

Published:2022-12 Issue:12 Volume:69 Page:6825-6829
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lei Wenyu¹,Wen Xiaokun¹,Yang Li¹,Zhang Pengzhen¹,Cao Guowei¹,Zhuge Fuwei¹^ORCID,Zhang Youwei²^ORCID,Chang Haixin¹,Zhang Wenfeng¹^ORCID

Affiliation:

1. State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China

2. Shenzhen Research and Development Center, Huazhong University of Science and Technology, Shenzhen, China

Funder

National Natural Science Foundation of China

Foundation of Shenzhen Science and Technology Innovation Committee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09930504.pdf?arnumber=9930504

Reference35 articles.

1. Design of p‐WSe 2 /n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

2. Semimetals for high-performance photodetection

3. Self‐Driven WSe 2 /Bi 2 O 2 Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response

4. High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process

5. Fast High-Responsivity Few-Layer MoTe2Photodetectors

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