Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China , Chengdu 611731, China
Abstract
We report a dual-junction strategy for fabricating a high-performance In2SexOy/In2Se3/Si heterojunction photodiode by oxidizing the epitaxial In2Se3 thin films. The device exhibits a suppressed dark current (4.2 × 10−11 A) and enhanced photocurrent at zero bias, benefiting from the double built-in electric fields. Consequently, it demonstrates excellent and uniform self-powered broadband (255–1050 nm) photodetection performance with the typical responsivity of several hundred mA/W, and detectivity of over 5 × 1011 Jones. Moreover, a fast response speed with a response time of 0.20 ms is achieved. Our investigation offers a potential route to construct full-spectrum photodetectors.
Funder
National Natural Science Foundation of China
Subject
Physics and Astronomy (miscellaneous)