Design of p‐WSe 2 /n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors-Reference-Cited by-同舟云学术

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Design of p‐WSe 2 /n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

Published:2021-10-07 Issue:4 Volume:32 Page:2107992
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Lee Chan Ho¹,Park Youngseo²,Youn Sukhyeong³⁴,Yeom Min Jae¹,Kum Hyun S.⁵,Chang Jiwon³⁴,Heo Junseok²,Yoo Geonwook¹^ORCID

Affiliation:

1. School of Electronic Engineering Soongsil University Seoul 06938 South Korea

2. Department of Electrical and Computer Engineering Ajou University Suwon 16499 South Korea

3. Department of System Semiconductor Engineering Yonsei University Seoul 03722 South Korea

4. Department of Materials Science and Engineering Yonsei University Seoul 03722 South Korea

5. Department of Electrical and Electronic Engineering Yonsei University Seoul 03722 South Korea

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202107992

Reference39 articles.

1. Strong light–matter coupling in two-dimensional atomic crystals

2. Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

3. Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction

4. Optoelectronic and photonic devices based on transition metal dichalcogenides

5. Atomically thin p–n junctions with van der Waals heterointerfaces

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2. High-Performance Visible-to-SWIR Photodetector Based on the Layered WS₂ Heterojunction with Light-Trapping Pyramidal Black Germanium;ACS Applied Materials & Interfaces;2024-08-31

3. Revealing Enhanced Optoelectronic Performance of Sb₂Se₃‐Based Self‐Sustaining Heterostructures with Bi₂Se₃ and ZnSe: A Dual Polarity Photo Response;Advanced Functional Materials;2024-08-18

4. Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO₃;ACS Applied Materials & Interfaces;2024-08-17

5. Selectively Al₂O₃ Passivated WSe₂/GaN Heterostructure for Ultralow-Noise High-Speed Broadband Photodetection;ACS Applied Electronic Materials;2024-08-07

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