Junction Temperature Online Extraction Method for Power MOSFET by Current Fall Time
Author:
Affiliation:
1. School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China
2. State Key Laboratory of Space Power Sources Technology, Shanghai Institute of Space Power-Sources, Shanghai, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9802454/09777868.pdf?arnumber=9777868
Reference30 articles.
1. Investigation of high temperature effects on MOSFET transconductance (g/sub m/)
2. Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage
3. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
4. Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects
5. Chips Classification for Suppressing Transient Current Imbalance of Parallel-Connected Silicon Carbide MOSFETs
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5. Online Measurement of Power MOSFET Junction Temperature With Storage Charge During Current Fall Process;IEEE Transactions on Components, Packaging and Manufacturing Technology;2022-12
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