Degradation state analysis of the IGBT module based on apparent junction temperature
-
Published:2023-10-27
Issue:1
Volume:8
Page:
-
ISSN:2367-2617
-
Container-title:Protection and Control of Modern Power Systems
-
language:en
-
Short-container-title:Prot Control Mod Power Syst
Author:
Xu Guoqing, Shao LingfengORCID, Xu Xiaoyan, Li Shen
Abstract
AbstractThe multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. The application of IGBT online degradation state analysis technology can be beneficial to the improvement of system reliability. The failure mechanism of IGBT devices is discussed in this paper, and a technique for analyzing the degradation state of IGBT based on apparent junction temperature is proposed. First, the distortion consistency of the voltage rise time in various failures is discussed, and the junction temperature dependence of the voltage rise time is then demonstrated. Subsequently, an apparent junction temperature model based on the voltage rise time is established (the fitting accuracy is as high as 94.3%). From the high-frequency model in the switching process of the device, an online extraction technology of key parameters (e.g., voltage rise time) is developed. Finally, an experimental platform for IGBT degradation state estimation is established, and the feasibility of IGBT degradation state estimation based on apparent junction temperature is proved, especially the degradation of bonding-wire and the gate-oxide-layer. The experimental results show that the proposed IGBT degradation state estimation technique based on apparent junction temperature is a reliable online estimation method with non-contact, high accuracy, and comprehensiveness.
Funder
National Key R&D Program of China under Grant
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology,Safety, Risk, Reliability and Quality
Reference31 articles.
1. Arya, A., Chanekar, A., Deshmukh, P., Verma, A., & Anand, S. (2021). Accurate online junction temperature estimation of IGBT using inflection point based updated i–v characteristics. Ieee Transactions On Power Electronics, 36(9), 9826–9836. https://doi.org/10.1109/TPEL.2021.3066287 2. Henn, J., Lüdecke, C., Laumen, M., Beushausen, S., Kalker, S., et al. (2022). Intelligent gate drivers for future power converters. IEEE Transactions On Power Electronics, 37(3), 3484–4503. https://doi.org/10.1109/TPEL.2021.3112337 3. Ma, W. (2011). Typical applications of power electronics in naval ship power systems. Transactions of China Electrotechnical Society, 26(5), 1–7. 4. Tang, G., Wen, J., He, Z., Cha, K., & Qiu, Y. (2008). Equivalent testing approach and its application in power system for high power electronics equipment. Proceedings of the CSEE, 28(36), 1–9. 5. Shao, L., Xu, G., Zheng, L., Pan, Z., & She, C. (2022). Igbt junction temperature extraction via voltage integral over voltage rise period. IEEE Journal of Emerging and Selected Topics in Power Electronics. https://doi.org/10.1109/JESTPE.2022.3173941
|
|