Online Measurement of Power MOSFET Junction Temperature With Storage Charge During Current Fall Process-Reference-Cited by-同舟云学术

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Online Measurement of Power MOSFET Junction Temperature With Storage Charge During Current Fall Process

Published:2022-12 Issue:12 Volume:12 Page:1922-1931
ISSN:2156-3950
Container-title:IEEE Transactions on Components, Packaging and Manufacturing Technology
language:
Short-container-title:IEEE Trans. Compon., Packag. Manufact. Technol.

Author:

Wei Weiwei¹^ORCID,Xu Guoqing¹^ORCID,Feng Wei²^ORCID

Affiliation:

1. School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China

2. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503870/10018545/09978917.pdf?arnumber=9978917

Reference36 articles.

1. Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)

2. Estimating Junction Temperature of SiC MOSFET Using Its Drain Current During Turn-On Transient

3. On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters;kuhn;Proc 13th Eur Conf Power Electron Appl,2009

4. Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage

5. Investigation of high temperature effects on MOSFET transconductance (g/sub m/)

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