The Impact of Electrostatic Interactions Between Defects on the Characteristics of Random Telegraph Noise-Reference-Cited by-同舟云学术

The Impact of Electrostatic Interactions Between Defects on the Characteristics of Random Telegraph Noise

Published:2022-12 Issue:12 Volume:69 Page:6991-6998
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Vecchi Sara¹^ORCID,Pavan Paolo¹^ORCID,Puglisi Francesco Maria¹^ORCID

Affiliation:

1. Dipartimento di Ingegneria “Enzo Ferrari,”, Università degli Studi di Modena e Reggio Emilia, Modena, Italy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09926003.pdf?arnumber=9926003

Reference30 articles.

1. Factorial hidden Markov model analysis of random telegraph noise in resistive random access memories;puglisi;ECTI Trans Electr Eng Electron Commun,2014

2. Advanced Data Encryption using 2D Materials

3. Memristive technologies for data storage, computation, encryption, and radio-frequency communication

4. A low-power true random number generator using random telegraph noise of single oxide-traps

5. Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices

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