Markov Chain Signal Generation Based on Single Magnetic Tunnel Junction-Reference-Cited by-同舟云学术

Markov Chain Signal Generation Based on Single Magnetic Tunnel Junction

Published:2023-12 Issue:12 Volume:44 Page:1963-1966
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yuan Xihui¹,Jian Jiajia¹,Chai Zheng¹^ORCID,An Suihuan¹,Gao Yawei¹,Zhou Xue¹^ORCID,Zhang Jian Fu²^ORCID,Zhang Weidong²^ORCID,Min Tai¹

Affiliation:

1. State Key Laboratory for Mechanical Behavior of Materials, the Center for Spintronic and Quantum Systems, and the School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, China

2. School of Engineering, Liverpool John Moores University, Liverpool, U.K.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Major Key Project of Peng Cheng Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10330769/10285338.pdf?arnumber=10285338

Reference27 articles.

1. Power-efficient combinatorial optimization using intrinsic noise in memristor Hopfield neural networks

2. Integer factorization using stochastic magnetic tunnel junctions

3. Experimental Demonstration of Conversion-Based SNNs with 1T1R Mott Neurons for Neuromorphic Inference

4. Compact Probabilistic Poisson Neuron Based on Back-Hopping Oscillation in STT-MRAM for All-Spin Deep Spiking Neural Network

5. High-$k$ Gate Stack Properties in SON Transistor Given by Voltage and Temperature Dependence of Random Telegraph Signal

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