Experimental Analysis of Vapor HF Etch Rate and Its Wafer Level Uniformity on a CMOS-MEMS Process-Reference-Cited by-同舟云学术

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Experimental Analysis of Vapor HF Etch Rate and Its Wafer Level Uniformity on a CMOS-MEMS Process

Published:2016-04 Issue:2 Volume:25 Page:401-412
ISSN:1057-7157
Container-title:Journal of Microelectromechanical Systems
language:
Short-container-title:J. Microelectromech. Syst.

Author:

Valle Juan,Fernandez Daniel,Madrenas Jordi

Funder

Ministerio de Ciencia e Innovación

Baolab Microsystems

European Social Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

http://xplorestaging.ieee.org/ielx7/84/7445275/07426346.pdf?arnumber=7426346

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

3. Investigation of Vapor HF Sacrificial Etching Characteristics Through Submicron Release Holes for Wafer-Level Vacuum Packaging Based on Silicon Migration Seal;Journal of Microelectromechanical Systems;2023-08

4. A Self-Corrected, Self-Cleaned MEMS and Suitable for Advanced Foundry Multi-Project Wafer (MPW);2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS);2023-01-15

5. Monolithic Sensor Integration in CMOS Technologies;IEEE Sensors Journal;2023-01-15

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