A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET
Author:
Affiliation:
1. Southern University of Science and Technology,School of Microelectronic,Shenzhen,China
2. Southern University of Science and Technology,School of Microelectronicsn,Shenzhen,China
3. Delft University of Technology,Fac.EEMCS,Delft,Netherlands
Funder
Shenzhen Fundamental Research Program
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873366.pdf?arnumber=9873366
Reference10 articles.
1. Short-circuit safe operating area of superjunction MOSFETs
2. A comprehensive study of the short-circuit characteristics of SiC MOSFETs
3. First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS
4. Thermal behavior of a superjunction MOSFET in a high-current conduction
5. Superior Short-Circuit Performance of SiC Superjunction MOSFET
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1. Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review;IEEE Transactions on Electron Devices;2024-06
2. SiC Super-Junction MOSFET robustness assessment and method to improve avalanche capability;Microelectronics Reliability;2024-06
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