A new low-parasitic polysilicon SCR ESD protection structure for RF ICs-Reference-Cited by-同舟云学术

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A new low-parasitic polysilicon SCR ESD protection structure for RF ICs

Published:2005-02 Issue:2 Volume:26 Page:121-123
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Haolu Xie ,Haigang Feng ,Rouying Zhan ,Wang A.,Rodriguez D.,Rice D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/30178/01386414.pdf?arnumber=1386414

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Trench IGBT With N-P-N Polysilicon Gate Structure for Low EMI Noise and High Robustness;IEEE Transactions on Electron Devices;2024-04

2. Fast Transient ESD Protection at RF Pins;2023 45th Annual EOS/ESD Symposium (EOS/ESD);2023-10-02

3. A Novel Dual-Direction SCR Embedded With Segmental and Cross-Bridge Topology for High-Voltage ESD Protection;IEEE Transactions on Electron Devices;2023-08

4. ESD versus IC Technologies;Practical ESD Protection Design;2021-12-03

5. ESD Layout Designs;Practical ESD Protection Design;2021-12-03

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