A Novel Dual-Direction SCR Embedded With Segmental and Cross-Bridge Topology for High-Voltage ESD Protection-Reference-Cited by-同舟云学术

A Novel Dual-Direction SCR Embedded With Segmental and Cross-Bridge Topology for High-Voltage ESD Protection

Published:2023-08 Issue:8 Volume:70 Page:4036-4042
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liang Hailian¹^ORCID,Cao Xiyue¹^ORCID,Liu Junliang¹,Sun Jun²,Liang Hongji¹^ORCID,Xu Jian¹,Lei Wen³,Gu Xiaofeng¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications (Ministry of Education), Jiangnan University, Wuxi, China

2. Process Development Department, CSMC Inc, Wuxi, China

3. Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA, Australia

Funder

National Natural Science Foundation of China

Joint Project of Yangtze River Delta Community of Sci-Tech Innovation

Higher Education Discipline Innovation Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10158929.pdf?arnumber=10158929

Reference25 articles.

1. Resistor-Triggered SCR Device for ESD Protection in High-Speed I/O Interface Circuits

2. A new low-parasitic polysilicon SCR ESD protection structure for RF ICs

3. An Unassisted, Low Trigger-, and High Holding-Voltage SCR (uSCR) for On-Chip ESD-Protection Applications

4. Cross-Coupling Low-Triggering Dual-Polarity CLTdSCR ESD Protection in CMOS

5. Robust Silicon-Controlled Rectifier With High-Holding Voltage for On-Chip Electrostatic Protection

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1. Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip;Semiconductor Science and Technology;2024-01-12

2. ESD-Robustness Study of High-voltage N-channel LDMOSs with Vertically Embedded SCR and Discrete P+ SCR in the Drain Terminal;2023 IEEE 5th Eurasia Conference on IOT, Communication and Engineering (ECICE);2023-10-27