A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs-Reference-Cited by-同舟云学术

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

Published:2022-11-07 Issue: Volume: Page:
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Container-title:2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Qian Jiashu¹,Liu Tianshi¹,Soto Jake²,Al-Jassim Mowafak M.³,Stahlbush Robert⁴,Mahadik Nadeemullah⁴,Shi Limeng¹,Jin Michael¹,Agarwal Anant K.¹

Affiliation:

1. The Ohio State University,Dept. of Electrical and Computer Engineering,Columbus,OH,USA,43210

2. Microchip Technology Inc.,Bend,OR,USA,97702

3. National Renewable Energy Laboratory (NREL),Golden,CO,USA,80401

4. Naval Research Laboratory (NRL),Washington,DC,USA,20375

Funder

National Renewable Energy Laboratory

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955255.pdf?arnumber=9955255

Reference10 articles.

1. Basal plane dislocation-free epitaxy of silicon carbide

2. Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer

3. Body Diode Reliability of Commercial SiC Power MOSFETs

4. Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress

5. Mechanism of Eliminating Basal Plane Dislocations in SiC Thin Films by Epitaxy on an Etched Substrate;zhang;Applied Physics Letters,2008

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