Atomic-scale and Damage-free Smoothing of $\boldsymbol{\beta-\text{Ga}_{2}\mathrm{O}_{3}}$ via Plasma-induced Atom Migration Manufacturing (PAMM)-Reference-Cited by-同舟云学术

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Atomic-scale and Damage-free Smoothing of $\boldsymbol{\beta-\text{Ga}_{2}\mathrm{O}_{3}}$ via Plasma-induced Atom Migration Manufacturing (PAMM)

Published:2022-08-30 Issue: Volume: Page:
ISSN:
Container-title:2022 8th International Conference on Nanomanufacturing & 4th AET Symposium on ACSM and Digital Manufacturing (Nanoman-AETS)
language:
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Author:

Zhang Yongjie¹,Yi Rong¹,Liu Wang¹,Li Rulin¹,Deng Hui¹

Affiliation:

1. Southern University of Science and Technology,Department of Mechanical and Energy Engineering,Shenzhen,China,518055

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10119459/10119460/10119514.pdf?arnumber=10119514

Reference27 articles.

1. Nonaqueous synthesis of TiO2 nanorods using inductively coupled plasma

2. Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

3. An efficient approach for atomic-scale polishing of single-crystal silicon via plasma-based atom-selective etching

4. Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching

5. Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

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