Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates-Reference-Cited by-同舟云学术

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Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates

Published:2012-12 Issue:24 Volume:24 Page:2232-2234
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Hsieh Cheng-Yu,Lin Bo-Wen,Cho Hsin-Ju,Wang Bau-Ming,Chang Nancy,Wu Yew-Chung Sermon

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/6362248/06330988.pdf?arnumber=6330988

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon doped semi-insulating freestanding GaN crystals by ethylene;Applied Physics Letters;2022-10-24

2. Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes;Journal of Physics D: Applied Physics;2016-02-17

3. Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate;IEEE Journal of Quantum Electronics;2014-12

4. Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes;RSC Adv.;2014-08-29

5. Crystalline quality improvement of GaN coalesced using nano-PSS with void-embedded nanostructure by MOVPE;physica status solidi (c);2014-02

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