Impact of Switching Variability, Memory Window, and Temperature on Vector Matrix Operations Using 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices-Reference-Cited by-同舟云学术

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Impact of Switching Variability, Memory Window, and Temperature on Vector Matrix Operations Using 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices

Published:2022-05-23 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS)
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Author:

Liehr Maximilian¹,Beckmann Karsten¹,Cady Nathaniel¹

Affiliation:

1. SUNY Polytechnic Institute,College of Nanoscale Science & Engineering,New York,USA

Funder

Air Force Research Laboratory

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9826869/9826902/09826924.pdf?arnumber=9826924

Reference16 articles.

1. A comprehensive review on emerging artificial neuromorphic devices

2. Nanoscale Hafnium Oxide RRAM Devices Exhibit Pulse Dependent Behavior and Multi-level Resistance Capability

3. Impact of Etch Process on Hafnium Dioxide Based Nanoscale RRAM Devices

4. Improving the Memory Window/Resistance Variability Trade-Off for 65nm CMOS Integrated HfO2 Based Nanoscale RRAM Devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of the position of TaOx:N-based barrier layer in TaOx RRAM devices;Frontiers in Materials;2024-06-03

2. Oxygen tracer diffusion in amorphous hafnia films for resistive memory;Materials Horizons;2024

3. Effect of Resistance variability in Vector Matrix Multiplication operations of 1T1R ReRAM crossbar arrays using an Embedded test platform;2023 IEEE 32nd Microelectronics Design & Test Symposium (MDTS);2023-05-08

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