TSV residual Cu step height analysis by white light interferometry for 3D integration-Reference-Cited by-同舟云学术

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TSV residual Cu step height analysis by white light interferometry for 3D integration

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 65th Electronic Components and Technology Conference (ECTC)
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Author:

Smith Daniel,Singh Sanjeev,Ramnath Yudesh,Rabie Mohamed,Zhang Dingyou,England Luke

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7133058/7159553/07159649.pdf?arnumber=7159649

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TSV Integration With Chip Level TSV-to-Pad Cu/SiO₂ Hybrid Bonding for DRAM Multiple Layer Stacking;IEEE Electron Device Letters;2023-07

2. Height measurement of microbumps using a white-light triangulation method;Applied Optics;2022-03-07

3. The Effect of Pitch Distance on the Statistics and Morphology of Through-Silicon Via Extrusion;IEEE Transactions on Components, Packaging and Manufacturing Technology;2021-06

4. Study on the relationship between Cu protrusion behavior and stresses evolution in the through-silicon via characterized by in-situ μ-Raman spectroscopy;Microelectronics Reliability;2020-12

5. Microstructure and Mechanical Reliability Issues of TSV;3D Microelectronic Packaging;2020-11-24

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