Low temperature, low pressure CMOS compatible Cu -Cu thermo-compression bonding with Ti passivation for 3D IC integration-Reference-Cited by-同舟云学术

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Low temperature, low pressure CMOS compatible Cu -Cu thermo-compression bonding with Ti passivation for 3D IC integration

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 65th Electronic Components and Technology Conference (ECTC)
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Author:

Panigrahi Asisa Kumar,Bonam Satish,Ghosh Tamal,Vanjari Siva Rama Krishna,Singh Shiv Govind

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7133058/7159553/07159909.pdf?arnumber=7159909

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interdiffusion mechanism and thermal conductance at the interfaces in Cu-to-Cu bonds achieved by coating nanolayers;Surfaces and Interfaces;2024-03

2. Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications;Transactions on Electrical and Electronic Materials;2023-11-29

3. Copper Bonding Technology in Heterogeneous Integration;Electronic Materials Letters;2023-04-19

4. Advanced Cu/Polymer Hybrid Bonding System for Fine‐Pitch 3D Stacking Devices;Advanced Materials Technologies;2023-04-12

5. A high-precision Mark positioning algorithm based on sub-pixel shape template matching in wafer bonding alignment;Precision Engineering;2023-03

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