Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s42341-023-00496-y.pdf
Reference22 articles.
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2. A.K. Panigrahi, T. Ghosh, C.H. Kumar, S.G. Singh, S.R.K. Vanjari, Direct, CMOS in-line process flow compatible, sub 100° C Cu–Cu thermocompression bonding using stress engineering. Electron. Mater. Lett. 14(3), 328–335 (2018)
3. A.K. Panigrahy, K.N. Chen, Low temperature Cu–Cu bonding technology in three-dimensional integration: an extensive review. J. Electron. Packag. 140(1), 010801 (2018)
4. A.K. Panigrahi, S. Bonam, T. Ghosh, S.G. Singh, S.R.K. Vanjari, Ultra-thin Ti passivation mediated breakthrough in high quality Cu-Cu bonding at low temperature and pressure. Mater. Lett. 169, 269–272 (2016)
5. A.K. Panigrahi, T. Ghosh, S.R.K. Vanjari, S.G. Singh, Demonstration of sub 150° C Cu-Cu thermocompression bonding for 3D IC applications, utilizing an ultra-thin layer of Manganin alloy as an effective surface passivation layer. Mater. Lett. 194, 86–89 (2017)
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