Ultra-thin Ti passivation mediated breakthrough in high quality Cu-Cu bonding at low temperature and pressure

Author:

Panigrahi Asisa Kumar,Bonam Satish,Ghosh Tamal,Singh Shiv Govind,Vanjari Siva Rama Krishna

Funder

DeitY

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Wafer level 3-D ICs Process Technology;Tan,2009

2. Overview of Wafer Level 3D ICs, in Wafer Level 3-D ICs Process Technology;Tan,2008

3. Electromigration resistance of copper interconnects;Save;Microelectron. Eng.,1997

4. Copper wafer bonding;Fan;Electrochem. Soild-State Lett.,1999

5. Silicon multilayer stacking based on copper wafer bonding;Tan;Electrochem. Solid-State Lett.,2005

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