Ru Passivation Layer Enables Cu–Cu Direct Bonding at Low Temperatures with Oxidation Inhibition-Reference-Cited by-同舟云学术

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Ru Passivation Layer Enables Cu–Cu Direct Bonding at Low Temperatures with Oxidation Inhibition

Published:2024-08-27 Issue:36 Volume:16 Page:48481-48487
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jeon Chansu¹,Kang Sukkyung²,Kim Myeong Eun¹,Park Juseong¹^ORCID,Kim Daehee¹,Kim Sanha²^ORCID,Kim Kyung Min¹^ORCID

Affiliation:

1. Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

2. Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c08390

Reference55 articles.

1. Physical limits for scaling of integrated circuits

2. Science and Engineering Beyond Moore's Law

3. Advanced Cu/Polymer Hybrid Bonding System for Fine‐Pitch 3D Stacking Devices

4. A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

5. Unleash Scaling Potential of 3D NAND with Innovative Xtacking® Architecture

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