Thermal stress destruction analysis in low-k layer by via-last TSV structure-Reference-Cited by-同舟云学术

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Thermal stress destruction analysis in low-k layer by via-last TSV structure

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 65th Electronic Components and Technology Conference (ECTC)
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Author:

Kitada Hideki,Akamatsu Toshiya,Mizushima Yoriko,Ishitsuka Takeshi,Sakuyama Seiki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7133058/7159553/07159850.pdf?arnumber=7159850

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal-Mechanical Analysis of TSV Array in 2.5D Silicon Interposer;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10

2. Communication—A Rotating Ring Disk Study to Monitor the Concentration of 2M5S in Copper Low TEC Electrolytes;Journal of The Electrochemical Society;2021-05-01

3. Advances in thermal conductivity for energy applications: a review;Progress in Energy;2021-01-01

4. Electrochemical Behavior of 2M5S and Its Influence on Reduction of Cu Pumping and Keep-Out Zone;Journal of The Electrochemical Society;2020-03-18

5. Microstructure Evolution and Protrusion of Electroplated Cu-Filled Through-Silicon Vias Subjected to Thermal Cyclic Loading;Journal of Electronic Materials;2017-05-22

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