The physical mechanism investigation between HK/IL gate stack breakdown and time-dependent oxygen vacancy trap generation in FinFET devices-Reference-Cited by-同舟云学术

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The physical mechanism investigation between HK/IL gate stack breakdown and time-dependent oxygen vacancy trap generation in FinFET devices

Published:2016-04 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Yang C. H.,Chen S. C.,Tsai Y. S.,Lu R.,Lee Y.-H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7565237/7574493/07574573.pdf?arnumber=7574573

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks;IEEE Transactions on Electron Devices;2023-04

2. GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods;Electronics;2022-11-04

4. A Realistic Modeling Approach To Explain the Physical Mechanism of TDDB For Automotive Grade-Zero Applications;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

5. AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

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